AP02N40H-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP02N40H-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.4 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO252
AP02N40H-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP02N40H-HF Datasheet (PDF)
ap02n40h-hf ap02n40j-hf.pdf
AP02N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP02N40 uses rugged design with the best combination of fastswitching and cost-effecti
ap02n40h.pdf
AP02N40H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP02N40 series are from Advanced Power innovated design andsilicon process technology to
ap02n40p.pdf
AP02N40PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AGSDescriptionGAP02N40 uses rugged design with the best combination of fastTO-220(P)DSswitching and cost-effectiveness.The TO-220 package is widely
ap02n40k-hf.pdf
AP02N40K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5.5 Simple Drive Requirement ID 0.45AG RoHS Compliant & Halogen-FreeSDDescriptionAP02N40 uses rugged design with the best combination of fastSswitching and cost-effectiveness.DG
ap02n40i-hf.pdf
AP02N40I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 400V Fast Switching Characteristic RDS(ON) 5 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionAP02N40 uses rugged design with the best combination of fastGswitching and cost-effectiveness. DTO-220CF
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KHB1D9N60I | NTGS3441 | SP8076E | NCE2309 | AD2N60S | NCEP01T12 | IPI65R150CFD
History: KHB1D9N60I | NTGS3441 | SP8076E | NCE2309 | AD2N60S | NCEP01T12 | IPI65R150CFD
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918