AP02N60H PDF and Equivalents Search

 

AP02N60H Specs and Replacement

Type Designator: AP02N60H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO252

AP02N60H substitution

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AP02N60H datasheet

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 ap02n60h ap02n60j.pdf pdf_icon

AP02N60H

AP02N60H/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6A G S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The th... See More ⇒

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 ap02n60h-h ap02n60j-h.pdf pdf_icon

AP02N60H

AP02N60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4A G Simple Drive Requirement S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications ... See More ⇒

 0.2. Size:65K  ape
 ap02n60h-h-hf ap02n60j-h-hf.pdf pdf_icon

AP02N60H

AP02N60H/J-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700V D Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4A G RoHS Compliant S Description G D S TO-252(H) The TO-252 package is widely preferred for all commercial-industrial surface mount applications and ... See More ⇒

 0.3. Size:98K  ape
 ap02n60h-hf ap02n60j-hf.pdf pdf_icon

AP02N60H

AP02N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant S Description G D TO-252(H) S The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC... See More ⇒

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Detailed specifications: 2SK3111-ZJ, AP01N60P, AP0203GMT-HF, AP02N40H-HF, AP02N40I-HF, AP02N40J-HF, AP02N40K-HF, AP02N40P, 18N50, AP02N60H-H, AP02N60I, AP02N60I-A-HF, AP02N60J, AP02N60J-H, AP02N60P-A-HF, AP02N60T-H-HF, AP02N70EI-HF

Keywords - AP02N60H MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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