AP02N60I
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP02N60I
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 22
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 27
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8
Ohm
Package:
TO220F
AP02N60I
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP02N60I
Datasheet (PDF)
..1. Size:108K ape
ap02n60i.pdf 
AP02N60IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2AGSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited for switch mode powersupplies ,AC-DC converters and
0.1. Size:175K ape
ap02n60i-a.pdf
AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionAP02N60 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
0.2. Size:56K ape
ap02n60i-a-hf.pdf
AP02N60I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 8 Simple Drive Requirement ID 2AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-220CFM package is widely preferred for all commercial-industrial applications. The device is suited
7.1. Size:56K ape
ap02n60p-a-hf.pdf
AP02N60P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2A RoHS Compliant & Halogen-FreeGD TO-220SDescriptionDThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is
7.2. Size:102K ape
ap02n60h ap02n60j.pdf
AP02N60H/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD 100% Avalanche Test RDS(ON) 8 Simple Drive Requirement ID 1.6AGSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC/DC converters. Theth
7.3. Size:69K ape
ap02n60p.pdf
AP02N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETRepetitive Avalanche Rated BVDSS 600V Fast Switching RDS(ON) 8 Simple Drive Requirement ID 2A RoHS CompliantGDTO-220SDescriptionDThe TO-220 package is universally preferred for all commerci
7.4. Size:55K ape
ap02n60p-hf.pdf
AP02N60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 2AG Halogen Free & RoHS CompliantSDescriptionThe TO-220 package is universally preferred for all commercial-Gindustrial applications. The device is sui
7.5. Size:131K ape
ap02n60t-h-hf.pdf
AP02N60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Fast Switching Characteristics RDS(ON) 9 Simple Drive Requirement ID 0.3AG RoHS Compliant & Halogen-FreeSSDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible o
7.6. Size:246K ape
ap02n60h-h ap02n60j-h.pdf
AP02N60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700VD Lower Gate Charge RDS(ON) 8.8 Fast Switching Characteristic ID 1.4AG Simple Drive RequirementSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications
7.7. Size:65K ape
ap02n60h-h-hf ap02n60j-h-hf.pdf
AP02N60H/J-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 700VD Fast Switching Characteristic RDS(ON) 8.8 Simple Drive Requirement ID 1.4AG RoHS CompliantSDescriptionGDS TO-252(H)The TO-252 package is widely preferred for all commercial-industrialsurface mount applications and
7.8. Size:98K ape
ap02n60h-hf ap02n60j-hf.pdf
AP02N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Lower Gate Charge RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS CompliantSDescriptionGDTO-252(H)SThe TO-252 package is widely preferred for all commercial-industrialsurface mount applications and suited for AC
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