AP02N90J-HF PDF and Equivalents Search

 

AP02N90J-HF Specs and Replacement

Type Designator: AP02N90J-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm

Package: TO251

AP02N90J-HF substitution

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AP02N90J-HF datasheet

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 ap02n90h-hf ap02n90j-hf.pdf pdf_icon

AP02N90J-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D ... See More ⇒

 6.1. Size:139K  ape
 ap02n90jb.pdf pdf_icon

AP02N90J-HF

AP02N90JB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900V D Fast Switching Characteristic RDS(ON) 7.2 Simple Drive Requirement ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest... See More ⇒

 6.2. Size:162K  ape
 ap02n90j.pdf pdf_icon

AP02N90J-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the ... See More ⇒

 7.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N90J-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the ... See More ⇒

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Detailed specifications: AP02N60J, AP02N60J-H, AP02N60P-A-HF, AP02N60T-H-HF, AP02N70EI-HF, AP02N70EJ, AP02N90H-HF, AP02N90I, STP65NF06, AP02N90P-HF, AP03N40AH-HF, AP03N40AI-HF, AP03N40AJ-HF, AP03N40AP-HF, AP03N40I-HF, AP03N40J-HF, AP03N70H-A-HF

Keywords - AP02N90J-HF MOSFET specs

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