2SJ413
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ413
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 250
nS
Cossⓘ -
Output Capacitance: 2400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package:
TO3PML
2SJ413
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ413
Datasheet (PDF)
..1. Size:79K sanyo
2sj413.pdf 
Ordering number:ENN5366AP-Channel Silicon MOSFET2SJ413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2076B Low-voltage drive.[2SJ413] Micaless package facilitating mounting.16.05.63.43.12.82.0 2.01.00.61 2 31 : Gate2 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLSpeci
9.1. Size:189K toshiba
2sj412.pdf
2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode:
9.2. Size:127K sanyo
2sj418.pdf
Ordering number:ENN5298AP-Channel Silicon MOSFET2SJ418Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ418]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ418]6.5 2.35.0 0.540.5
9.3. Size:411K sanyo
2sj416.pdf
No. N 5 2 6 62SJ416No. 526 652599 P MOS 2SJ416 4V Absolute Maximum Ratings / Ta=25 unit VDSS 30 V VGSS 20 V
9.4. Size:100K sanyo
2sj419.pdf
Ordering number:EN5313AP-Channel Silicon MOSFET2SJ419Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SJ419]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim
9.5. Size:131K sanyo
2sj417.pdf
Ordering number:EN5267P-Channel Silicon MOSFET2SJ417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ417]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ417]6.5 2.35.0 0.540.5
9.6. Size:1111K renesas
2sj410.pdf
2SJ410Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00Jun 05, 2006 DescriptionHigh speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver OutlineRENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG
9.7. Size:69K nec
2sj411.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ411P-CHANNEL SIGNAL MOS FETFOR SWITCHINGThe 2SJ411 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)7.0 MAX. 1.2a switching element that can be directly driven by the output of anIC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for power control switche
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