FK10VS-10 Specs and Replacement
Type Designator: FK10VS-10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.13 Ohm
Package: TO220S
FK10VS-10 substitution
- MOSFET ⓘ Cross-Reference Search
FK10VS-10 datasheet
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Detailed specifications: FK10KM-12, FK10KM-9, FK10SM-10, FK10SM-12, FK10SM-9, FK10UM-10, FK10UM-12, FK10UM-9, 2N60, FK10VS-12, FK10VS-9, FK14KM-10, FK14KM-9, FK14SM-10, FK14SM-12, FK14SM-9, FK14UM-10
Keywords - FK10VS-10 MOSFET specs
FK10VS-10 cross reference
FK10VS-10 equivalent finder
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History: FDZ299P
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