All MOSFET. AP0803GMP-HF Datasheet

 

AP0803GMP-HF Datasheet and Replacement


   Type Designator: AP0803GMP-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: EFSOP8
 

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AP0803GMP-HF Datasheet (PDF)

 ..1. Size:97K  ape
 ap0803gmp-hf.pdf pdf_icon

AP0803GMP-HF

AP0803GMP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m RoHS Compliant & Halogen-Free ID 44AGSDescriptionDDAdvanced Power MOSFETs from APEC provide the DDDdesigner with the best combination of fast switching,ruggedized device design,

 6.1. Size:92K  ape
 ap0803gmt-hf.pdf pdf_icon

AP0803GMP-HF

AP0803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 6.2. Size:95K  ape
 ap0803gmt-a-hf.pdf pdf_icon

AP0803GMP-HF

AP0803GMT-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

 8.1. Size:1531K  1
 ap0803qd.pdf pdf_icon

AP0803GMP-HF

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Keywords - AP0803GMP-HF MOSFET datasheet

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