AP08P20GS-HF Datasheet and Replacement
Type Designator: AP08P20GS-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO263
AP08P20GS-HF substitution
AP08P20GS-HF Datasheet (PDF)
ap08p20gs p-hf.pdf

AP08P20GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching,
ap08p20gp.pdf

AP08P20GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -200V Simple Drive Requirement RDS(ON) 680m Fast Switching Characteristic ID -8AG RoHS Compliant & Halogen-FreeSDescriptionAP08P20 series are from Advanced Power innovated designand silicon process technology to achieve the low
Datasheet: AP0603GM-HF , AP06P20GJ-HF , AP0704GMT-HF , AP07N70CI-H , AP0803GMP-HF , AP0803GMT-HF , AP08N60I-HF , AP08P20GP-HF , IRFZ46N , AP0903GH-HF , AP0903GM-HF , AP0903GYT-HF , AP0904GH-HF , AP0904GJB-HF , AP0904GJ-HF , AP0904GMT-HF , AP0904GYT-HF .
History: IRF720 | MDF13N65BTH | IXFT24N100
Keywords - AP08P20GS-HF MOSFET datasheet
AP08P20GS-HF cross reference
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History: IRF720 | MDF13N65BTH | IXFT24N100



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