AP0904GH-HF Datasheet and Replacement
Type Designator: AP0904GH-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
AP0904GH-HF substitution
AP0904GH-HF Datasheet (PDF)
ap0904gh-hf ap0904gj-hf.pdf

AP0904GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast
ap0904gh.pdf

AP0904GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID 51AG RoHS Compliant & Halogen-FreeSDescriptionGAP0904 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to ac
ap0904gyt-hf.pdf

AP0904GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 40VD Small Size & Lower Profile RDS(ON) 11.5m RoHS Compliant & Halogen-Free ID 13.5AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device d
ap0904gp-hf.pdf

AP0904GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAP0904 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
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