AP09N50P-HF Specs and Replacement

Type Designator: AP09N50P-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

AP09N50P-HF substitution

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AP09N50P-HF datasheet

 ..1. Size:95K  ape
ap09n50p-hf.pdf pdf_icon

AP09N50P-HF

AP09N50P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 500V Fast Switching Characteristic RDS(ON) 0.75 RoHS Compliant & Halogen-Free ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G ... See More ⇒

 7.1. Size:59K  ape
ap09n50i-hf.pdf pdf_icon

AP09N50P-HF

AP09N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized... See More ⇒

 7.2. Size:59K  ape
ap09n50i.pdf pdf_icon

AP09N50P-HF

AP09N50I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.75 Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistan... See More ⇒

 9.1. Size:238K  ape
ap09n20h.pdf pdf_icon

AP09N50P-HF

AP09N20H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 380m Fast Switching Characteristics ID 8.6A RoHS Compliant G S Description AP09N20 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possibl... See More ⇒

Detailed specifications: AP0904GYT-HF, AP09N20BGH-HF, AP09N20BGI-HF, AP09N20BGP-HF, AP09N20H-HF, AP09N20J-HF, AP09N50I, AP09N50I-HF, 7N60, AP09N70I-A, AP09N70I-A-HF, AP09N70I-H-HF, AP09N70R-H, AP09N70P-H, AP09N70P-A, AP09N70R, AP09N70R-A-HF

Keywords - AP09N50P-HF MOSFET specs

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