All MOSFET. AP09N70P-A Datasheet

 

AP09N70P-A Datasheet and Replacement


   Type Designator: AP09N70P-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220
 

 AP09N70P-A substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP09N70P-A Datasheet (PDF)

 ..1. Size:120K  ape
ap09n70p-a.pdf pdf_icon

AP09N70P-A

AP09N70P-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 650VD Fast Switching RDS(ON) 0.75GG Simple Drive Requirement ID 9AS RoHS CompliantSDescriptionThe TO-220 package is widely preferred for all commercial-industrialapplications. The device is suited for DC-DC ,AC-DC converte

 0.1. Size:57K  ape
ap09n70p-a-hf.pdf pdf_icon

AP09N70P-A

AP09N70P-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9AG RoHS Compliant & Halogen-FreeSDescriptionAP09N70 series are from Advanced Power innovated designand silicon process technology to achieve the lowe

 5.1. Size:64K  ape
ap09n70p-h-lf ap09n70p-h.pdf pdf_icon

AP09N70P-A

AP09N70P/R-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3AGSDescriptionGAP09N70 series are specially designed as main switching devices forTO-220(P)DSuniversal 90~265VAC off-line AC/DC converter app

 7.1. Size:97K  ape
ap09n70i-a.pdf pdf_icon

AP09N70P-A

AP09N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - AP09N70P-A MOSFET datasheet

 AP09N70P-A cross reference
 AP09N70P-A equivalent finder
 AP09N70P-A lookup
 AP09N70P-A substitution
 AP09N70P-A replacement

 

 
Back to Top

 


 
.