AP09N70P-A Specs and Replacement

Type Designator: AP09N70P-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

AP09N70P-A substitution

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AP09N70P-A datasheet

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AP09N70P-A

AP09N70P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 650V D Fast Switching RDS(ON) 0.75 GG Simple Drive Requirement ID 9A S RoHS Compliant S Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-DC converte... See More ⇒

 0.1. Size:57K  ape
ap09n70p-a-hf.pdf pdf_icon

AP09N70P-A

AP09N70P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒

 5.1. Size:64K  ape
ap09n70p-h-lf ap09n70p-h.pdf pdf_icon

AP09N70P-A

AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90 265VAC off-line AC/DC converter app... See More ⇒

 7.1. Size:97K  ape
ap09n70i-a.pdf pdf_icon

AP09N70P-A

AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe... See More ⇒

Detailed specifications: AP09N50I, AP09N50I-HF, AP09N50P-HF, AP09N70I-A, AP09N70I-A-HF, AP09N70I-H-HF, AP09N70R-H, AP09N70P-H, IRFB7545, AP09N70R, AP09N70R-A-HF, AP09N90CW-HF, AP09N90W, AP09T10GH-HF, AP09T10GK-HF, AP09T10GP-HF, AP1001BSQ

Keywords - AP09N70P-A MOSFET specs

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