All MOSFET. AP10N70I-A-HF Datasheet

 

AP10N70I-A-HF Datasheet and Replacement


   Type Designator: AP10N70I-A-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO220F
 

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AP10N70I-A-HF Datasheet (PDF)

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 ap10n70i-a-hf.pdf pdf_icon

AP10N70I-A-HF

AP10N70I-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

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 ap10n70i-a.pdf pdf_icon

AP10N70I-A-HF

AP10N70I-ARoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withGthe best combination of fast switching, ruggedized device design, lowDTO-22

 7.1. Size:189K  ape
 ap10n70p.pdf pdf_icon

AP10N70I-A-HF

AP10N70R/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applicati

 7.2. Size:172K  ape
 ap10n70s.pdf pdf_icon

AP10N70I-A-HF

AP10N70SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70S is specially designed as main switching devices for universalGD90~265VAC off-line AC/DC converter applications. TO-263 type provid

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History: FRM9230H | FDS8947A | APT1004RGN | NTTFS4823N

Keywords - AP10N70I-A-HF MOSFET datasheet

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