2SK3285 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3285
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 210 nS
Cossⓘ - Output Capacitance: 410 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SMP
2SK3285 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3285 Datasheet (PDF)
2sk3285.pdf
Ordering number:ENN6358N-Channel Silicon MOSFET2SK3285DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2093A[2SK3285]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2169[2SK3285]4.510.21.31 2 31.20.82.55 2.550.41 : Gate2 : Drain3 : Source2.55 2.55
2sk3285k.pdf
isc N-Channel MOSFET Transistor 2SK3285KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3285b.pdf
isc N-Channel MOSFET Transistor 2SK3285BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3284.pdf
Ordering number : ENA01682SK3284N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3284ApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 10 ADra
2sk3283.pdf
Ordering number : ENN66002SK3283N-Channel Silicon MOSFET2SK3283Load S/W ApplicationsPreliminaryFeatures Package Dimensions Low ON resistance. unit : mm 4V-drive. 2083B[2SK3283]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3283]6.5 2.35.0 0.540.50.851 2 30.61
2sk3280.pdf
Ordering number:ENN6436N-Channel Silicon MOSFET2SK3280DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 4V drive.2083B Ultrahigh-speed switching.[2SK3280]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3280]6.5 2.35.0 0.540.50.851
2sk3288entl.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3288.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3289.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sk3287.pdf
To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: H02N60SJ
History: H02N60SJ
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