2SK3289 Specs and Replacement
Type Designator: 2SK3289
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 600 nS
Cossⓘ -
Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.26 Ohm
Package: CMPAK
- MOSFET ⓘ Cross-Reference Search
2SK3289 datasheet
..1. Size:42K renesas
2sk3289.pdf 
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
8.1. Size:48K sanyo
2sk3285.pdf 
Ordering number ENN6358 N-Channel Silicon MOSFET 2SK3285 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2093A [2SK3285] 4.5 10.2 1.3 1.2 0.8 0.4 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO SMP unit mm 2169 [2SK3285] 4.5 10.2 1.3 1 2 3 1.2 0.8 2.55 2.55 0.4 1 Gate 2 Drain 3 Source 2.55 2.55... See More ⇒
8.2. Size:34K sanyo
2sk3284.pdf 
Ordering number ENA0168 2SK3284 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3284 Applications Features Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 10 A Dra... See More ⇒
8.3. Size:23K sanyo
2sk3283.pdf 
Ordering number ENN6600 2SK3283 N-Channel Silicon MOSFET 2SK3283 Load S/W Applications Preliminary Features Package Dimensions Low ON resistance. unit mm 4V-drive. 2083B [2SK3283] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3283] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1... See More ⇒
8.4. Size:45K sanyo
2sk3280.pdf 
Ordering number ENN6436 N-Channel Silicon MOSFET 2SK3280 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2083B Ultrahigh-speed switching. [2SK3280] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3280] 6.5 2.3 5.0 0.5 4 0.5 0.85 1... See More ⇒
8.5. Size:91K renesas
2sk3288entl.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.6. Size:56K renesas
2sk3288.pdf 
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
8.7. Size:57K renesas
2sk3287.pdf 
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
8.8. Size:283K inchange semiconductor
2sk3285k.pdf 
isc N-Channel MOSFET Transistor 2SK3285K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
8.9. Size:357K inchange semiconductor
2sk3285b.pdf 
isc N-Channel MOSFET Transistor 2SK3285B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
Detailed specifications: AP10N70S, AP10N70W, AP10P10GH-HF, AP10P10GJ-HF, AP11N50I, 2SK3285, 2SK3287, 2SK3288, IRF1404, 2SK3290, 2SK3304, 2SK3307, 2SK3310, 2SK3314, 2SK3378, AP1203AGMT-HF, AP1332GEU-HF
Keywords - 2SK3289 MOSFET specs
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2SK3289 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.