2SK3307 Datasheet and Replacement

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3307SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3307 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3307 TO-3PFEATURES Super low on-state resistance:RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 35 A)(TO-3P)RDS(on)2 = 14

isc N-Channel MOSFET Transistor 2SK3307FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3305SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3305 TO-220ABdesigned for high voltage applications such as switching power2SK3305-S TO-262supply, AC adapter.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3306SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3306 is N-Channel DMOS FET device that featuresPART NUMBER PACKAGEa low gate charge and excellent switching characteristics, and2SK3306 Isolated TO-220 (MP-45F)designed for high voltage applications such as switching powersupply, AC adapter.

2SK3309 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3309 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolute

2SK3302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3302 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V,

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3304SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATIONThe 2SK3304 is N-Channel MOS FET device that features aPART NUMBER PACKAGELow gate charge and excellent switching characteristics, and2SK3304 TO-3Pdesigned for high voltage applications such as switchingpower supply.FEATURES(TO-3P) Low gate c

SMD Type MOSFETMOS Field Effect Transistor2SK3305TO-263Unit: mm+0.2Features 4.57-0.2+0.11.27-0.1Low gate chargeQG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistance+0.1RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A)0.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.

SMD Type MOSFETN-Channel MOSFET2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating: 30 V Avalanche capability ratingsDrain (D)BodyGate (G) DiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 30 Con

isc N-Channel MOSFET Transistor 2SK3305FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3305-ZJFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3301DFEATURESDrain Current : I = 1A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 20(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3309BFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3309KFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3305-SFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3306FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3301IFEATURESDrain Current : I = 1A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 20(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr