AP13P15GH-HF Specs and Replacement
Type Designator: AP13P15GH-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
AP13P15GH-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP13P15GH-HF datasheet
ap13p15gs p-hf.pdf
AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design... See More ⇒
ap13p15gj-hf.pdf
AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application... See More ⇒
ap13p15gp ap13p15gs.pdf
AP13P15GS/P Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D... See More ⇒
Detailed specifications: AP1203AGMT-HF, AP1332GEU-HF, AP1332GEV-HF, AP1333GU, AP1334GEU-HF, AP13N50I-HF, AP13N50R-HF, AP13N50W, IRFP250N, AP13P15GJ-HF, AP13P15GP-HF, AP13P15GS-HF, AP1430GEU6-HF, AP14S50S-HF, AP15N03GH-HF, AP15N03GJ-HF, AP15P10GH-HF
Keywords - AP13P15GH-HF MOSFET specs
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