AP13P15GH-HF Datasheet and Replacement
Type Designator: AP13P15GH-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 38 nC
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO252
AP13P15GH-HF substitution
AP13P15GH-HF Datasheet (PDF)
ap13p15gs p-hf.pdf

AP13P15GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, ruggedized device design
ap13p15gj-hf.pdf

AP13P15GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for all commercial-industrialGDsurface mount application
ap13p15gp ap13p15gs.pdf

AP13P15GS/PPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDLower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGD
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