AP13P15GS-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP13P15GS-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
TO263
AP13P15GS-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP13P15GS-HF
Datasheet (PDF)
5.1. Size:62K ape
ap13p15gs p-hf.pdf
AP13P15GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, ruggedized device design
5.2. Size:72K ape
ap13p15gp ap13p15gs.pdf
AP13P15GS/PPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDLower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGD
6.1. Size:100K ape
ap13p15gj-hf.pdf
AP13P15GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for all commercial-industrialGDsurface mount application
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