AP15P10GS MOSFET. Datasheet pdf. Equivalent
Type Designator: AP15P10GS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO263
AP15P10GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP15P10GS Datasheet (PDF)
ap15p10gp ap15p10gs.pdf
AP15P10GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO-263(S)r
ap15p10gp-hf ap15p10gs-hf.pdf
AP15P10GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,D
ap15p10gh-hf ap15p10gj-hf.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount app
ap15p10gh.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
ap15p10gj.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
ap15p10gi.pdf
AP15P10GIHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID3 -8.3AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap15p10gh.pdf
AP15P10GHwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch
ap15p10gj.pdf
AP15P10GJwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Conv
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IXTH24N50
History: IXTH24N50
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