2SK3475
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3475
Marking Code: W*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.9
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 12.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
SC62
2SK3475
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3475
Datasheet (PDF)
..1. Size:157K toshiba
2sk3475.pdf 
2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this
8.1. Size:230K toshiba
2sk3473.pdf
2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3473 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum
8.2. Size:191K toshiba
2sk3472.pdf
2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK3472 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs
8.3. Size:154K toshiba
2sk3471.pdf
2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 10 (typ.) High forward transfer admittance: |Yfs| = 0.4 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V,
8.4. Size:171K toshiba
2sk3476.pdf
2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this
8.5. Size:205K renesas
2sk3479-s-z-zj.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:100K fuji
2sk3474-01.pdf
FUJI POWER MOSFET2003032SK3474-01Super FAP-G Series N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsfor SwitchingFoot Print PatternAbsolute Maximum Ratings at Tc=25C( unless otherwise specified)Item Symbol Ratings Unit Remarks Equivalent circuit schema
8.7. Size:357K inchange semiconductor
2sk3479-z.pdf
isc N-Channel MOSFET Transistor 2SK3479-ZFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.8. Size:287K inchange semiconductor
2sk3473.pdf
isc N-Channel MOSFET Transistor 2SK3473FEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.9. Size:289K inchange semiconductor
2sk3479.pdf
isc N-Channel MOSFET Transistor 2SK3479FEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.10. Size:354K inchange semiconductor
2sk3472.pdf
isc N-Channel MOSFET Transistor 2SK3472FEATURESDrain Current : I = 1A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 4.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.11. Size:357K inchange semiconductor
2sk3479-zj.pdf
isc N-Channel MOSFET Transistor 2SK3479-ZJFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.12. Size:283K inchange semiconductor
2sk3479-s.pdf
isc N-Channel MOSFET Transistor 2SK3479-SFEATURESDrain Current : I = 83A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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