2SK3481
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3481
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO220AB
2SK3481
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3481
Datasheet (PDF)
..1. Size:76K nec
2sk3481.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3481SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3481 is N-channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3481 TO-220AB2SK3481-S TO-262FEATURES2SK3481-ZJ TO-263 Super low on-state resistance:2SK3481-Z TO-220SMDNoteRDS(on)1 = 50 m MAX.
..2. Size:289K inchange semiconductor
2sk3481.pdf
isc N-Channel MOSFET Transistor 2SK3481FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.1. Size:357K inchange semiconductor
2sk3481-z.pdf
isc N-Channel MOSFET Transistor 2SK3481-ZFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
0.2. Size:357K inchange semiconductor
2sk3481-zj.pdf
isc N-Channel MOSFET Transistor 2SK3481-ZJFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
0.3. Size:283K inchange semiconductor
2sk3481-s.pdf
isc N-Channel MOSFET Transistor 2SK3481-SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
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