AP2305GN-HF Specs and Replacement
Type Designator: AP2305GN-HF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ -
Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
AP2305GN-HF datasheet
..1. Size:94K ape
ap2305gn-hf.pdf 
AP2305GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resis... See More ⇒
6.1. Size:96K ape
ap2305gn.pdf
AP2305GN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID - 3.7A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,lo... See More ⇒
8.1. Size:59K ape
ap2305agn.pdf
AP2305AGN Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G , low on-resistance and cos... See More ⇒
8.2. Size:57K ape
ap2305cgn-hf.pdf
AP2305CGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 85m Surface Mount Device ID - 3.2A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l... See More ⇒
8.3. Size:94K ape
ap2305bgn-hf.pdf
AP2305BGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65m D Surface Mount Device ID -4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistan... See More ⇒
8.4. Size:59K ape
ap2305n-hf.pdf
AP2305N-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID - 3.4A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,lo... See More ⇒
8.5. Size:79K ape
ap2305agn-hf.pdf
AP2305AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistan... See More ⇒
8.7. Size:866K cn vbsemi
ap2305agn.pdf
AP2305AGN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒
8.8. Size:2104K cn apm
ap2305bi.pdf
AP2305BI -20V P-Channel Enhancement Mode MOSFET Description The AP2305BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.2A DS D R ... See More ⇒
8.9. Size:1273K cn apm
ap2305mi.pdf
AP2305MI -20V P-Channel Enhancement Mode MOSFET Description The AP2305MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS D R ... See More ⇒
8.10. Size:1569K cn apm
ap2305ai.pdf
AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS D R ... See More ⇒
Detailed specifications: AP2302AGN-HF, AP2302GN-HF, AP2303GN-HF, AP2304AGN-HF, AP2304GN-HF, AP2305AGN-HF, AP2305BGN-HF, AP2305CGN-HF, TK10A60D, AP2305N-HF, AP2306AGEN-HF, AP2306AGN-HF, AP2306CGN-HF, AP2306CGTN-HF, AP2306GN-HF, AP2307GN-HF, 2SK3779-01R
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
