2SK3779-01R PDF and Equivalents Search

 ..1. Size:274K  inchange semiconductor
 2sk3779-01r.pdf

isc N-Channel MOSFET Transistor 2SK3779-01R FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 53m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 7.1. Size:103K  fuji
 2sk3779.pdf

2SK3779-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless ot... See More ⇒

 8.1. Size:511K  sanyo
 2sk377.pdf

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 8.2. Size:106K  fuji
 2sk3773-01mr.pdf

2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒

 8.3. Size:93K  fuji
 2sk3775.pdf

2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings (mm) 200406 Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) F o o t P r i n t DC-DC converters Equivalent circuit schematic Maximum ratings and characteristic ... See More ⇒

 8.4. Size:146K  fuji
 2sk3774-01l-s-sj.pdf

2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T... See More ⇒

 8.5. Size:106K  fuji
 2sk3778.pdf

2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherw... See More ⇒

 8.6. Size:103K  fuji
 2sk3777.pdf

2SK3777-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless ot... See More ⇒

 8.7. Size:105K  fuji
 2sk3778-01.pdf

2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other... See More ⇒

 8.8. Size:96K  fuji
 2sk3771-01mr.pdf

2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒

 8.9. Size:92K  fuji
 2sk3770-01mr.pdf

2SK3770-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒

 8.10. Size:105K  fuji
 2sk3772-01.pdf

2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒

 8.11. Size:105K  fuji
 2sk3776-01.pdf

2SK3776-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless other... See More ⇒

 8.12. Size:283K  inchange semiconductor
 2sk3774-01l.pdf

isc N-Channel MOSFET Transistor 2SK3774-01L FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 8.13. Size:357K  inchange semiconductor
 2sk3774-01s.pdf

isc N-Channel MOSFET Transistor 2SK3774-01S FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

 8.14. Size:372K  inchange semiconductor
 2sk3778-01.pdf

isc N-Channel MOSFET Transistor 2SK3778-01 FEATURES Drain Current I = 59A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 53m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.15. Size:289K  inchange semiconductor
 2sk3772-01.pdf

isc N-Channel MOSFET Transistor 2SK3772-01 FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 8.16. Size:357K  inchange semiconductor
 2sk3774-01sj.pdf

isc N-Channel MOSFET Transistor 2SK3774-01SJ FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒