2SK3794-Z Specs and Replacement

Type Designator: 2SK3794-Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO252

2SK3794-Z substitution

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2SK3794-Z datasheet

 7.1. Size:151K  nec
2sk3794.pdf pdf_icon

2SK3794-Z

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. TO-251 (MP-3) 2SK3794 TO-252 (MP-3Z) 2SK3794-Z FEATURES Low On-state resistance (TO-251) RDS(on)1 = 44 m MAX. (VGS = 10 ... See More ⇒

 8.1. Size:184K  toshiba
2sk3797.pdf pdf_icon

2SK3794-Z

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3797 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute ... See More ⇒

 8.2. Size:221K  toshiba
2sk3799.pdf pdf_icon

2SK3794-Z

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3799 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement model V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Max... See More ⇒

 8.3. Size:222K  toshiba
2sk3798.pdf pdf_icon

2SK3794-Z

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3798 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.5 (typ.) High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement-mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings ... See More ⇒

Detailed specifications: AP2306AGN-HF, AP2306CGN-HF, AP2306CGTN-HF, AP2306GN-HF, AP2307GN-HF, 2SK3779-01R, 2SK3793, 2SK3794, AO3407, 2SK385, 2SK386, 2SK3863, 2SK3864, 2SK3868, 2SK3879, 2SK389, 2SK3906

Keywords - 2SK3794-Z MOSFET specs

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