All MOSFET. 2SK3868 Datasheet

 

2SK3868 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3868

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm

Package: SC67

2SK3868 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3868 Datasheet (PDF)

1.1. 2sk3868.pdf Size:234K _toshiba

2SK3868
2SK3868

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.3? (typ.) • High forward transfer admittance: |Yfs| = 3S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rati

4.1. 2sk3864.pdf Size:196K _toshiba

2SK3868
2SK3868

2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit: mm Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 20 m? (typ.) • High forward transfer admittance: |Yfs| = 75 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDSS = 120 V) • Enhancement mode: Vth = 2.0~4.0 V (V

4.2. 2sk3869.pdf Size:250K _toshiba

2SK3868
2SK3868

2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.55 ? (typ.) • High forward transfer admittance: |Yfs| = 5.5 S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 450 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

 4.3. 2sk3863.pdf Size:297K _toshiba

2SK3868
2SK3868

2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35? (typ.) • High forward transfer admittance: |Yfs| = 2.8S (typ.) • Low leakage current: IDSS = 100 ?A (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R

4.4. 2sk386.pdf Size:41K _no

2SK3868

Datasheet: 2SK3779-01R , 2SK3793 , 2SK3794 , 2SK3794-Z , 2SK385 , 2SK386 , 2SK3863 , 2SK3864 , 2N3824 , 2SK3879 , 2SK389 , 2SK3906 , 2SK3929-01MR , 2SK3931-01 , 2SK3932-01MR , 2SK3936 , AP2308GEN-HF .

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