2SK3929-01MR Specs and Replacement
Type Designator: 2SK3929-01MR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 11
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 150
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62
Ohm
Package:
TO220F
2SK3929-01MR substitution
-
MOSFET ⓘ Cross-Reference Search
2SK3929-01MR Specs
..1. Size:280K inchange semiconductor
2sk3929-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3929-01MR FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
7.1. Size:114K fuji
2sk3929.pdf 
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.1. Size:186K fuji
2sk3922-01.pdf 
2SK3922-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance Outline Drawings [mm] No secondary breadown Low driving power Avalanche-proof TFP Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless othe... See More ⇒
8.2. Size:189K fuji
2sk3920-01.pdf 
2SK3920-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.3. Size:93K fuji
2sk3926-01mr.pdf 
2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒
8.4. Size:154K fuji
2sk3924-01l-s-sj.pdf 
2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (... See More ⇒
8.5. Size:189K fuji
2sk3923-01.pdf 
2SK3923-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.6. Size:113K fuji
2sk3928-01.pdf 
2SK3928-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.7. Size:227K fuji
2sk3921-01l-s-sj.pdf 
2SK3921-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C... See More ⇒
8.8. Size:92K fuji
2sk3925-01.pdf 
2SK3925-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.9. Size:153K fuji
2sk3927-01l-s-sj.pdf 
2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T... See More ⇒
8.10. Size:289K inchange semiconductor
2sk3920-01.pdf 
isc N-Channel MOSFET Transistor 2SK3920-01 FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.11. Size:357K inchange semiconductor
2sk3921-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3921-01SJ FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.12. Size:356K inchange semiconductor
2sk3927-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3927-01S FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.13. Size:280K inchange semiconductor
2sk3926-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3926-01MR FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.14. Size:357K inchange semiconductor
2sk3924-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3924-01S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.15. Size:283K inchange semiconductor
2sk3927-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3927-01L FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.16. Size:289K inchange semiconductor
2sk3923-01.pdf 
isc N-Channel MOSFET Transistor 2SK3923-01 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.17. Size:283K inchange semiconductor
2sk3921-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3921-01L FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.18. Size:283K inchange semiconductor
2sk3924-01l.pdf 
isc N-Channel MOSFET Transistor 2SK3924-01L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.19. Size:357K inchange semiconductor
2sk3927-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3927-01SJ FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.20. Size:289K inchange semiconductor
2sk3928-01.pdf 
isc N-Channel MOSFET Transistor 2SK3928-01 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.21. Size:357K inchange semiconductor
2sk3921-01s.pdf 
isc N-Channel MOSFET Transistor 2SK3921-01S FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.22. Size:358K inchange semiconductor
2sk3924-01sj.pdf 
isc N-Channel MOSFET Transistor 2SK3924-01SJ FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.23. Size:288K inchange semiconductor
2sk3925-01.pdf 
isc N-Channel MOSFET Transistor 2SK3925-01 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
Detailed specifications: 2SK385
, 2SK386
, 2SK3863
, 2SK3864
, 2SK3868
, 2SK3879
, 2SK389
, 2SK3906
, P60NF06
, 2SK3931-01
, 2SK3932-01MR
, 2SK3936
, AP2308GEN-HF
, AP2309AGN-HF
, AP2309GEN-HF
, AP2309GN-HF
, AP2310AGN-HF
.
History: HSS2308A
Keywords - 2SK3929-01MR MOSFET specs
2SK3929-01MR cross reference
2SK3929-01MR equivalent finder
2SK3929-01MR lookup
2SK3929-01MR substitution
2SK3929-01MR replacement
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