2SK3929-01MR Datasheet. Specs and Replacement
Type Designator: 2SK3929-01MR 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
Package: TO220F
📄📄 Copy
2SK3929-01MR substitution
- MOSFET ⓘ Cross-Reference Search
2SK3929-01MR datasheet
..1. Size:280K inchange semiconductor
2sk3929-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK3929-01MR FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
7.1. Size:114K fuji
2sk3929.pdf
2SK3929-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.1. Size:186K fuji
2sk3922-01.pdf
2SK3922-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance Outline Drawings [mm] No secondary breadown Low driving power Avalanche-proof TFP Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless othe... See More ⇒
8.2. Size:189K fuji
2sk3920-01.pdf
2SK3920-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.3. Size:93K fuji
2sk3926-01mr.pdf
2SK3926-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 ... See More ⇒
8.4. Size:154K fuji
2sk3924-01l-s-sj.pdf
2SK3924-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (... See More ⇒
8.5. Size:189K fuji
2sk3923-01.pdf
2SK3923-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
8.6. Size:113K fuji
2sk3928-01.pdf
2SK3928-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.7. Size:227K fuji
2sk3921-01l-s-sj.pdf
2SK3921-01L,S,SJ FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C... See More ⇒
8.8. Size:92K fuji
2sk3925-01.pdf
2SK3925-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒
8.9. Size:153K fuji
2sk3927-01l-s-sj.pdf
2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T... See More ⇒
8.10. Size:289K inchange semiconductor
2sk3920-01.pdf
isc N-Channel MOSFET Transistor 2SK3920-01 FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.11. Size:357K inchange semiconductor
2sk3921-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3921-01SJ FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.12. Size:356K inchange semiconductor
2sk3927-01s.pdf
isc N-Channel MOSFET Transistor 2SK3927-01S FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.13. Size:280K inchange semiconductor
2sk3926-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3926-01MR FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.14. Size:357K inchange semiconductor
2sk3924-01s.pdf
isc N-Channel MOSFET Transistor 2SK3924-01S FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.15. Size:283K inchange semiconductor
2sk3927-01l.pdf
isc N-Channel MOSFET Transistor 2SK3927-01L FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.16. Size:289K inchange semiconductor
2sk3923-01.pdf
isc N-Channel MOSFET Transistor 2SK3923-01 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.17. Size:283K inchange semiconductor
2sk3921-01l.pdf
isc N-Channel MOSFET Transistor 2SK3921-01L FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.18. Size:283K inchange semiconductor
2sk3924-01l.pdf
isc N-Channel MOSFET Transistor 2SK3924-01L FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.19. Size:357K inchange semiconductor
2sk3927-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3927-01SJ FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.20. Size:289K inchange semiconductor
2sk3928-01.pdf
isc N-Channel MOSFET Transistor 2SK3928-01 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.21. Size:357K inchange semiconductor
2sk3921-01s.pdf
isc N-Channel MOSFET Transistor 2SK3921-01S FEATURES Drain Current I = 67A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.22. Size:358K inchange semiconductor
2sk3924-01sj.pdf
isc N-Channel MOSFET Transistor 2SK3924-01SJ FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.23. Size:288K inchange semiconductor
2sk3925-01.pdf
isc N-Channel MOSFET Transistor 2SK3925-01 FEATURES Drain Current I = 34A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 110m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
Detailed specifications: 2SK385, 2SK386, 2SK3863, 2SK3864, 2SK3868, 2SK3879, 2SK389, 2SK3906, MMIS60R580P, 2SK3931-01, 2SK3932-01MR, 2SK3936, AP2308GEN-HF, AP2309AGN-HF, AP2309GEN-HF, AP2309GN-HF, AP2310AGN-HF
Keywords - 2SK3929-01MR MOSFET specs
2SK3929-01MR cross reference
2SK3929-01MR equivalent finder
2SK3929-01MR pdf lookup
2SK3929-01MR substitution
2SK3929-01MR replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
