All MOSFET. 2SK3931-01 Datasheet

 

2SK3931-01 Datasheet and Replacement


   Type Designator: 2SK3931-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm
   Package: TO220AB
 

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2SK3931-01 Datasheet (PDF)

 ..1. Size:289K  inchange semiconductor
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2SK3931-01

isc N-Channel MOSFET Transistor 2SK3931-01FEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 700m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:101K  fuji
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2SK3931-01

2SK3931-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406TO-220ABFUJI POWER MOSFETSuper FAP-G SeriesFeatures High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)Maximum ratings and characteristicAbsolute maximum ratingsEquivalent

 8.1. Size:180K  toshiba
2sk3936.pdf pdf_icon

2SK3931-01

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDS

 8.2. Size:288K  toshiba
2sk3934.pdf pdf_icon

2SK3931-01

2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23 (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim

Datasheet: 2SK386 , 2SK3863 , 2SK3864 , 2SK3868 , 2SK3879 , 2SK389 , 2SK3906 , 2SK3929-01MR , IRF520 , 2SK3932-01MR , 2SK3936 , AP2308GEN-HF , AP2309AGN-HF , AP2309GEN-HF , AP2309GN-HF , AP2310AGN-HF , AP2310CGN-HF .

History: BLF7G22L-200 | 2SK3069 | GSM3302W | NCEP018N60 | FQPF9N08L | AP15T20GI-HF | UPA2810T1L

Keywords - 2SK3931-01 MOSFET datasheet

 2SK3931-01 cross reference
 2SK3931-01 equivalent finder
 2SK3931-01 lookup
 2SK3931-01 substitution
 2SK3931-01 replacement

 

 
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