2SK3932-01MR PDF and Equivalents Search

 ..1. Size:280K  inchange semiconductor
 2sk3932-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3932-01MR FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 7.1. Size:105K  fuji
 2sk3932.pdf

2SK3932-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C... See More ⇒

 8.1. Size:180K  toshiba
 2sk3936.pdf

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3936 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Fast reverse recovery time trr = 380 ns (typ.) Low drain-source ON-resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 16.5 S (typ.) Low leakage current IDS... See More ⇒

 8.2. Size:288K  toshiba
 2sk3934.pdf

2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3934 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.23 (typ.) High forward transfer admittance Yfs = 8.2 S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim... See More ⇒

 8.3. Size:313K  toshiba
 2sk3935.pdf

2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3935 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute... See More ⇒

 8.4. Size:101K  fuji
 2sk3931.pdf

2SK3931-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent... See More ⇒

 8.5. Size:173K  fuji
 2sk3930-01l-s-sj.pdf

2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (T... See More ⇒

 8.6. Size:162K  fuji
 2sk3933-01l-s-sj.pdf

2SK3933-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance See to P4 No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings E... See More ⇒

 8.7. Size:356K  inchange semiconductor
 2sk3933-01s.pdf

isc N-Channel MOSFET Transistor 2SK3933-01S FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.8. Size:289K  inchange semiconductor
 2sk3931-01.pdf

isc N-Channel MOSFET Transistor 2SK3931-01 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.9. Size:282K  inchange semiconductor
 2sk3933-01l.pdf

isc N-Channel MOSFET Transistor 2SK3933-01L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.10. Size:356K  inchange semiconductor
 2sk3933-01sj.pdf

isc N-Channel MOSFET Transistor 2SK3933-01SJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 700m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 8.11. Size:357K  inchange semiconductor
 2sk3930-01s.pdf

isc N-Channel MOSFET Transistor 2SK3930-01S FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.12. Size:286K  inchange semiconductor
 2sk3936.pdf

isc N-Channel MOSFET Transistor 2SK3936 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.13. Size:283K  inchange semiconductor
 2sk3930-01l.pdf

isc N-Channel MOSFET Transistor 2SK3930-01L FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.14. Size:279K  inchange semiconductor
 2sk3934.pdf

isc N-Channel MOSFET Transistor 2SK3934 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 300m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.15. Size:279K  inchange semiconductor
 2sk3935.pdf

isc N-Channel MOSFET Transistor 2SK3935 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 250m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.16. Size:357K  inchange semiconductor
 2sk3930-01sj.pdf

isc N-Channel MOSFET Transistor 2SK3930-01SJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 800m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒