AP2310CGN-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2310CGN-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.38 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 3.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 6.5 nS
Drain-Source Capacitance (Cd): 50 pF
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
Package: SOT23
AP2310CGN-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2310CGN-HF Datasheet (PDF)
1.1. ap2310cgn-hf.pdf 
Size:93K _a-power
AP2310CGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ Simple Drive Requirement BVDSS 60V D ÐŽ Small Package Outline RDS(ON) 75m? ÐŽ Surface Mount Device ID 3.2A S ÐŽ Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resis
4.1. ap2310gg-hf.pdf Size:56K _a-power
AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ Lower Gate Charge BVDSS 60V D ÐŽ Fast Switching Characteristic RDS(ON) 90m? ÐŽ Simple Drive Requirement ID 2.7A G ÐŽ RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S ruggedized
4.2. ap2310gn-hf.pdf Size:94K _a-power
AP2310GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ Simple Drive Requirement BVDSS 60V D ÐŽ Small Package Outline RDS(ON) 90m? ÐŽ Surface Mount Device ID 3A S ÐŽ RoHS Compliant SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient
4.3. ap2310gk-hf.pdf Size:49K _a-power
AP2310GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ Simple Drive Requirement BVDSS 60V ÐŽ ÐŽ ÐŽ D ÐŽ Lower Gate Charge RDS(ON) 90m? ÐŽ ÐŽ ÐŽ S ÐŽ Fast Switching Characteristic ID 4.1A ÐŽ ÐŽ ÐŽ D ÐŽ RoHS Compliant & Halogen-Free ÐŽ ÐŽ ÐŽ SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer
4.4. ap2310agn-hf.pdf Size:58K _a-power
AP2310AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ÐŽ Simple Drive Requirement BVDSS 65V D ÐŽ Small Package Outline RDS(ON) 80m? ÐŽ Surface Mount Device ID 3A S ÐŽ RoHS Compliant & Halogen-Free SOT-23 G D Description AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
4.5. ap2310gn.pdf Size:68K _a-power
AP2310GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Simple Drive Requirement BVDSS 60V ▼ ▼ ▼ ▼Small Package Outline RDS(ON) 90mΩ ▼ ▼ ▼ D ▼Surface Mount Device ID 3A ▼ ▼ ▼ S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o
Datasheet: 2SK3931-01 , 2SK3932-01MR , 2SK3936 , AP2308GEN-HF , AP2309AGN-HF , AP2309GEN-HF , AP2309GN-HF , AP2310AGN-HF , BUZ90A , AP2310GG-HF , AP2310GK-HF , AP2310GN-HF , AP2311GK-HF , AP2311GN-HF , AP2312GN , AP2313GN-HF , AP2314GN-HF .
