All MOSFET. AP2426GEY-HF Datasheet

 

AP2426GEY-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2426GEY-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0265 Ohm
   Package: 29288

 AP2426GEY-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2426GEY-HF Datasheet (PDF)

 ..1. Size:99K  ape
 ap2426gey-hf.pdf

AP2426GEY-HF AP2426GEY-HF

AP2426GEY-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD1/D2 Lower on-resistance RDS(ON) 26.5mG2 Surface Mount Package ID 6AS2 RoHS Compliant & Halogen-Free G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processingG1 G2techniques to achiev

 9.1. Size:74K  ape
 ap2428gey.pdf

AP2426GEY-HF AP2426GEY-HF

AP2428GEYPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30VD2D2 Lower on-resistance RDS(ON) 27mD1D1G2 Surface mount package ID 5.9AS2 RoHS compliant G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized

 9.2. Size:115K  ape
 ap2422gy.pdf

AP2426GEY-HF AP2426GEY-HF

AP2422GYRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 30VD2D2 Lower on-resistance RDS(ON) 40mD1D1G2 Surface mount package ID 4.8AS2G1S12928-8DescriptionD1 D2Advanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest possible on-resistance, ex

 9.3. Size:173K  ape
 ap2428gn3.pdf

AP2426GEY-HF AP2426GEY-HF

AP2428GN3RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2D2 Bottom Exposed DFN BVDSS 30VD1D1 Low On-resistance RDS(ON) 27m Lower Profile ID 5.5AS2G2S1DFN3*3G1D2 D1D1 D2G1 G2S1 S2Absolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage 30 VVGS Gate-Source Voltage 10 VI

Datasheet: AP2332GN-HF , AP2334GN-HF , AP2338GN-HF , AP2342GK-HF , AP2344GEN-HF , AP2344GN-HF , AP2348GN-HF , AP2422GY , P55NF06 , AP2428GEY , AP2428GN3 , AP2430GN3-HF , AP2434GN3-HF , 2SK4037 , 2SK404 , 2SK4042 , 2SK410 .

History: AOT15S60L | 2SK3820 | HFP730 | CS30N10D

 

 
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