2SK417
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK417
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package: 2-10K1B
2SK417
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK417
Datasheet (PDF)
0.1. Size:55K 1
2sk4179.pdf
Ordering number : ENA1269 2SK4179SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4179ApplicationsFeatures Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGate-to-S
0.2. Size:94K sanyo
2sk4171.pdf
Ordering number : ENA0787 2SK4171SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4171ApplicationsFeatures Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sour
0.3. Size:271K sanyo
2sk4177.pdf
Ordering number : ENA0869 2SK4177SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4177ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condit
0.4. Size:321K renesas
2sk4178-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.5. Size:321K renesas
2sk4178-s27-ay.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.6. Size:299K onsemi
2sk4177.pdf
Ordering number : ENA0869A2SK4177N-Channel Power MOSFEThttp://onsemi.com1500V, 2A, 13 , TO-263-2LFeatures ON-resistance RDS(on)=10 (typ.) Input capacitance Ciss=380pF (typ.) 10V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 1500 VGate-to-Source Voltage VGSS 20 VDrain Cu
0.7. Size:355K inchange semiconductor
2sk4178.pdf
isc N-Channel MOSFET Transistor 2SK4178FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
0.8. Size:289K inchange semiconductor
2sk4179.pdf
isc N-Channel MOSFET Transistor 2SK4179FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 13.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.9. Size:288K inchange semiconductor
2sk4171.pdf
isc N-Channel MOSFET Transistor 2SK4171FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
0.10. Size:232K inchange semiconductor
2sk4177.pdf
isc N-Channel MOSFET Transistor 2SK4177DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V = 1500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power suppliesABSOLUTE MAXIMUM RATINGS(T =25)CSYM
0.11. Size:287K inchange semiconductor
2sk4178-zk.pdf
isc N-Channel MOSFET Transistor 2SK4178-ZKFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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