2SK417 Specs and Replacement
Type Designator: 2SK417
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ -
Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: 2-10K1B
- MOSFET ⓘ Cross-Reference Search
2SK417 datasheet
0.1. Size:55K 1
2sk4179.pdf 
Ordering number ENA1269 2SK4179 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4179 Applications Features Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Gate-to-S... See More ⇒
0.2. Size:94K sanyo
2sk4171.pdf 
Ordering number ENA0787 2SK4171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4171 Applications Features Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Sour... See More ⇒
0.3. Size:271K sanyo
2sk4177.pdf 
Ordering number ENA0869 2SK4177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4177 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit... See More ⇒
0.4. Size:321K renesas
2sk4178-zk.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
0.5. Size:321K renesas
2sk4178-s27-ay.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
0.6. Size:299K onsemi
2sk4177.pdf 
Ordering number ENA0869A 2SK4177 N-Channel Power MOSFET http //onsemi.com 1500V, 2A, 13 , TO-263-2L Features ON-resistance RDS(on)=10 (typ.) Input capacitance Ciss=380pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1500 V Gate-to-Source Voltage VGSS 20 V Drain Cu... See More ⇒
0.7. Size:355K inchange semiconductor
2sk4178.pdf 
isc N-Channel MOSFET Transistor 2SK4178 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
0.8. Size:289K inchange semiconductor
2sk4179.pdf 
isc N-Channel MOSFET Transistor 2SK4179 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 13.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
0.9. Size:288K inchange semiconductor
2sk4171.pdf 
isc N-Channel MOSFET Transistor 2SK4171 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.2m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
0.10. Size:232K inchange semiconductor
2sk4177.pdf 
isc N-Channel MOSFET Transistor 2SK4177 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 1500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYM... See More ⇒
0.11. Size:287K inchange semiconductor
2sk4178-zk.pdf 
isc N-Channel MOSFET Transistor 2SK4178-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 2SK404
, 2SK4042
, 2SK410
, 2SK413
, 2SK414
, 2SK415
, 2SK416L
, 2SK416S
, IRF9540N
, AP2451GY-HF
, AP2530AGY-HF
, AP2530GY-HF
, AP2531GY
, AP2532GY
, AP2533GY-HF
, AP2535GEY-HF
, AP25N10GH-HF
.
History: IXFH18N100Q3
Keywords - 2SK417 MOSFET specs
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