All MOSFET. AP2615GY-HF Datasheet

 

AP2615GY-HF Datasheet and Replacement


   Type Designator: AP2615GY-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.7 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT26
 

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AP2615GY-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap2615gy-hf.pdf pdf_icon

AP2615GY-HF

AP2615GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2615 series are from Advanced Power innovated design and siliconGprocess technology

 7.1. Size:167K  ape
 ap2615gey.pdf pdf_icon

AP2615GY-HF

AP2615GEY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -30VD Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0AGDD RoHS Compliant & Halogen-FreeSOT-26DDescriptionAP2615 series are from Advanced Power innovated design and siliconGprocess technology to

 9.1. Size:56K  ape
 ap2611gyt-hf.pdf pdf_icon

AP2615GY-HF

AP2611GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d

 9.2. Size:96K  ape
 ap2612gy-hf.pdf pdf_icon

AP2615GY-HF

AP2612GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS 30VDD Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6AGD RoHS CompliantDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the lowest possible on-resistanc

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Keywords - AP2615GY-HF MOSFET datasheet

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