AP2616GY-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2616GY-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 125
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
SOT26
AP2616GY-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2616GY-HF
Datasheet (PDF)
..1. Size:93K ape
ap2616gy-hf.pdf
AP2616GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 30VDD Lower Gate Charge RDS(ON) 18m Small Footprint & Low Profile Package ID 8.5AGD RoHS Compliant & Halogen-FreeDSOT-26DescriptionAP2616 series are from Advanced Power innovated design andDsilicon process t
9.1. Size:56K ape
ap2611gyt-hf.pdf
AP2611GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d
9.2. Size:96K ape
ap2612gy-hf.pdf
AP2612GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS 30VDD Simple Drive Requirement RDS(ON) 35m Surface Mount Device ID 6AGD RoHS CompliantDSOT-26DescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto achieve the lowest possible on-resistanc
9.3. Size:58K ape
ap2611gy-hf.pdf
AP2611GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -100V Small Package Outline RDS(ON) 500m Surface Mount Device ID - 1.4AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2611 series are from Advanced Power innovated design and siliconGprocess technology to achieve t
9.4. Size:93K ape
ap2615gy-hf.pdf
AP2615GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -30V Lower Gate Charge RDS(ON) 52m Small Footprint & Low Profile Package ID -5AG RoHS Compliant & Halogen-FreeSSDDescriptionDAP2615 series are from Advanced Power innovated design and siliconGprocess technology
9.5. Size:58K ape
ap2610gy-hf.pdf
AP2610GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Fast Switching Characteristic BVDSS 60VD Lower Gate Charge RDS(ON) 90mD Small Footprint & Low Profile Package ID 3.5AGD Halogen Free & RoHS Compliant ProductSOT-26 DDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesDto ach
9.6. Size:206K ape
ap2617gy.pdf
AP2617GY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 1.8V Gate Drive BVDSS -20VD Small Package Outline RDS(ON) 38mD Surface Mount Device ID -6AGD RoHS Compliant & Halogen-FreeSOT-26DDDescriptionAP2617 series are from Advanced Power innovated design and siliconprocess technology to ach
9.7. Size:57K ape
ap2614gy-hf.pdf
AP2614GY-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Capable of 2.5V Gate Drive BVDSS 20VDD Lower On-resistance RDS(ON) 25mG Surface Mount Package ID 7.2AD RoHS Compliant & Halogen-Free SOT-26 DDDescriptionAP2614 series are from Advanced Power innovated design andsilicon process technology to achiev
9.8. Size:55K ape
ap2613gy-hf.pdf
AP2613GY-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic D BVDSS -20V Lower Gate Charge RDS(ON) 37m Small Footprint & Low Profile Package ID - 6.2AG RoHS Compliant & Halogen-FreeSSDDescriptionDAdvanced Power MOSFETs u
9.9. Size:56K ape
ap2613gyt-hf.pdf
AP2613GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID -15.4AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device d
9.10. Size:167K ape
ap2615gey.pdf
AP2615GEY-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS -30VD Small Package Outline D RDS(ON) 52m Surface Mount Device ID - 5.0AGDD RoHS Compliant & Halogen-FreeSOT-26DDescriptionAP2615 series are from Advanced Power innovated design and siliconGprocess technology to
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