AP2R403AGMT-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP2R403AGMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 36.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 81 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 810 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: PMPAK5X6
AP2R403AGMT-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP2R403AGMT-HF Datasheet (PDF)
ap2r403agmt-hf.pdf
AP2R403AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 150AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switchi
ap2r403gmt-hf.pdf
AP2R403GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 130AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: STI6N80K5 | IRFS4615 | STK400 | NP82N055CLE | IRFS4510 | AM4432N | AM3932NE
History: STI6N80K5 | IRFS4615 | STK400 | NP82N055CLE | IRFS4510 | AM4432N | AM3932NE
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918