AP2R403AGMT-HF Specs and Replacement
Type Designator: AP2R403AGMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 36.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 810 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: PMPAK5X6
AP2R403AGMT-HF substitution
- MOSFET ⓘ Cross-Reference Search
AP2R403AGMT-HF datasheet
ap2r403agmt-hf.pdf
AP2R403AGMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 150A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switchi... See More ⇒
ap2r403gmt-hf.pdf
AP2R403GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 130A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
Detailed specifications: AP2764AI-HF, AP2764AP-A-HF, AP2764I-A, AP2765I-A-HF, AP2851GO, AP2852GO, AP2864I-A-HF, AP2N7002K-HF, IRFP064N, AP2R403GMT-HF, AP2R803AGMT-HF, AP2R803GH-HF, AP2R803GMT-HF, AP2RA04GMT-HF, AP30N30W, AP30N30WI, AP30P10GH-HF
Keywords - AP2R403AGMT-HF MOSFET specs
AP2R403AGMT-HF cross reference
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AP2R403AGMT-HF substitution
AP2R403AGMT-HF replacement
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