All MOSFET. AP2R403AGMT-HF Datasheet

 

AP2R403AGMT-HF Datasheet and Replacement


   Type Designator: AP2R403AGMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 36.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PMPAK5X6
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AP2R403AGMT-HF Datasheet (PDF)

 ..1. Size:95K  ape
 ap2r403agmt-hf.pdf pdf_icon

AP2R403AGMT-HF

AP2R403AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 150AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switchi

 7.1. Size:94K  ape
 ap2r403gmt-hf.pdf pdf_icon

AP2R403AGMT-HF

AP2R403GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 130AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

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History: APT8015JVR | SM7518NSU | ME8205B | WMB090DNV6LG4 | 2SK1739 | CSD18533KCS | SFW9Z14

Keywords - AP2R403AGMT-HF MOSFET datasheet

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