AP2R403AGMT-HF Datasheet and Replacement
Type Designator: AP2R403AGMT-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 36.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 810 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: PMPAK5X6
AP2R403AGMT-HF Datasheet (PDF)
ap2r403agmt-hf.pdf

AP2R403AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 150AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switchi
ap2r403gmt-hf.pdf

AP2R403GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 130AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
Datasheet: AP2764AI-HF , AP2764AP-A-HF , AP2764I-A , AP2765I-A-HF , AP2851GO , AP2852GO , AP2864I-A-HF , AP2N7002K-HF , 5N50 , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W , AP30N30WI , AP30P10GH-HF .
History: FQB13N10 | IRF610 | DMP210DUFB4
Keywords - AP2R403AGMT-HF MOSFET datasheet
AP2R403AGMT-HF cross reference
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AP2R403AGMT-HF replacement
History: FQB13N10 | IRF610 | DMP210DUFB4



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