AP2R403GMT-HF Specs and Replacement

Type Designator: AP2R403GMT-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: PMPAK5X6

AP2R403GMT-HF substitution

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AP2R403GMT-HF datasheet

 ..1. Size:94K  ape
ap2r403gmt-hf.pdf pdf_icon

AP2R403GMT-HF

AP2R403GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 130A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

 7.1. Size:95K  ape
ap2r403agmt-hf.pdf pdf_icon

AP2R403GMT-HF

AP2R403AGMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.4m Low On-resistance ID 150A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switchi... See More ⇒

Detailed specifications: AP2764AP-A-HF, AP2764I-A, AP2765I-A-HF, AP2851GO, AP2852GO, AP2864I-A-HF, AP2N7002K-HF, AP2R403AGMT-HF, AO4468, AP2R803AGMT-HF, AP2R803GH-HF, AP2R803GMT-HF, AP2RA04GMT-HF, AP30N30W, AP30N30WI, AP30P10GH-HF, AP30P10GI

Keywords - AP2R403GMT-HF MOSFET specs

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