AP30P10GI Specs and Replacement

Type Designator: AP30P10GI

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO220F

AP30P10GI substitution

- MOSFET ⓘ Cross-Reference Search

 

AP30P10GI datasheet

 ..1. Size:151K  ape
ap30p10gi.pdf pdf_icon

AP30P10GI

AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 6.1. Size:93K  ape
ap30p10gs.pdf pdf_icon

AP30P10GI

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 6.2. Size:94K  ape
ap30p10gs-hf.pdf pdf_icon

AP30P10GI

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

 6.3. Size:185K  ape
ap30p10gh.pdf pdf_icon

AP30P10GI

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat... See More ⇒

Detailed specifications: AP2R403GMT-HF, AP2R803AGMT-HF, AP2R803GH-HF, AP2R803GMT-HF, AP2RA04GMT-HF, AP30N30W, AP30N30WI, AP30P10GH-HF, IRF540, AP30P10GP-HF, AP30P10GS, AP30T03GH-HF, AP30T10GH-HF, AP30T10GI-HF, AP30T10GK-HF, AP30T10GM-HF, AP30T10GP-HF

Keywords - AP30P10GI MOSFET specs

 AP30P10GI cross reference

 AP30P10GI equivalent finder

 AP30P10GI pdf lookup

 AP30P10GI substitution

 AP30P10GI replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility