AP3403GJ MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3403GJ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.8 nC
trⓘ - Rise Time: 20.8 nS
Cossⓘ - Output Capacitance: 103 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO251
AP3403GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3403GJ Datasheet (PDF)
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