AP40T10GH-HF Specs and Replacement

Type Designator: AP40T10GH-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 39 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO252

AP40T10GH-HF substitution

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AP40T10GH-HF datasheet

 ..1. Size:55K  ape
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AP40T10GH-HF

AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G D Advanced Power MOSFETs from APEC provide the designer with S TO-252(H) the best combination of fast switching, ru... See More ⇒

 5.1. Size:197K  ape
ap40t10gh.pdf pdf_icon

AP40T10GH-HF

AP40T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39A G RoHS Compliant S Description G AP40T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to achieve the... See More ⇒

 5.2. Size:818K  cn vbsemi
ap40t10gh.pdf pdf_icon

AP40T10GH-HF

AP40T10GH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle... See More ⇒

 6.1. Size:93K  ape
ap40t10gr.pdf pdf_icon

AP40T10GH-HF

AP40T10GR RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100V D Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resist... See More ⇒

Detailed specifications: AP40P03GI-HF, AP40P03GJ, AP40P03GP, AP40T03GH, AP40T03GI, AP40T03GJ, AP40T03GP, AP40T03GS, IRFB7545, AP40T10GI-HF, AP40T10GP-HF, AP40T10GR, AP4224AGM, AP4224GM, AP4224LGM-HF, AP4226AGM, AP4226BGM-HF

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