All MOSFET. AP4224AGM Datasheet

 

AP4224AGM MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP4224AGM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO8

 AP4224AGM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4224AGM Datasheet (PDF)

 ..1. Size:93K  ape
 ap4224agm.pdf

AP4224AGM AP4224AGM

AP4224AGMRoHS-compliant ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 15mD1D1ID 9.2AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedized device design, ultra low

 8.1. Size:74K  ape
 ap4224lgm-hf-pre.pdf

AP4224AGM AP4224AGM

AP4224LGM-HFPreliminaryAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 14mD1 Dual N MOSFET Package ID 10AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide the designerD2D1with the best combination of

 8.2. Size:95K  ape
 ap4224gm-hf.pdf

AP4224AGM AP4224AGM

AP4224GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 14mD1 Dual N MOSFET Package ID 10AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combinat

 8.3. Size:226K  ape
 ap4224lgm.pdf

AP4224AGM AP4224AGM

AP4224LGMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 24mD1 Dual N MOSFET Package ID 7.1AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP4224 series are from Advanced Power innovated design andD2D1silicon process

 8.4. Size:96K  ape
 ap4224gm.pdf

AP4224AGM AP4224AGM

AP4224GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 14mD1D1 Dual N MOSFET Package ID 10AG2 RoHS CompliantS2G1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast swit

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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