AP4437GM-HF Specs and Replacement

Type Designator: AP4437GM-HF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SO8

AP4437GM-HF substitution

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AP4437GM-HF datasheet

 ..1. Size:93K  ape
ap4437gm-hf.pdf pdf_icon

AP4437GM-HF

AP4437GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Lower On-resistance RDS(ON) 16m D Fast Switching Characteristic ID -10.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination ... See More ⇒

 9.1. Size:93K  ape
ap4430gm-hf.pdf pdf_icon

AP4437GM-HF

AP4430GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ultra_Low On-resistance BVDSS 35V D D D Simple Drive Requirement RDS(ON) 4.6m D Fast Switching Characteristic ID 20A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination... See More ⇒

 9.2. Size:95K  ape
ap4438cgm-hf.pdf pdf_icon

AP4437GM-HF

AP4438CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination o... See More ⇒

 9.3. Size:176K  ape
ap4434gm.pdf pdf_icon

AP4437GM-HF

AP4434GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D D D Capable of 2.5V gate drive RDS(ON) 18.5m D Surface mount package ID 8.3A G S S S SO-8 D Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized devi... See More ⇒

Detailed specifications: AP4434AGYT-HF, AP4434GH-HF, AP4434GM, AP4435GH-HF, AP4435GJ-HF, AP4435GM-HF, AP4435GYT-HF, AP4436GM, NCEP15T14, AP4438AGM-HF, AP4438BGM-HF, AP4438CGM-HF, AP4438GM-HF, AP4438GSM-HF, AP4438GYT-HF, AP4439GH-HF, AP4439GM-HF

Keywords - AP4437GM-HF MOSFET specs

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