AP4438GSM-HF MOSFET Datasheet: N-Ch, 30V, 11.7A. Full specification with pinout and replacement list

AP4438GSM-HF Specs and Replacement

Type Designator: AP4438GSM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SO8

AP4438GSM-HF substitution

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AP4438GSM-HF datasheet

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AP4438GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 11.5m D Fast Switching Performance ID 11.7A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode designer with the best co... See More ⇒

7.1. Size:116K ape
ap4438gyt.pdf pdf_icon

AP4438GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7A G S D D Description D D AP4438 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-r... See More ⇒

7.2. Size:59K ape
ap4438gyt-hf.pdf pdf_icon

AP4438GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7A G S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi... See More ⇒

7.3. Size:94K ape
ap4438gm-hf.pdf pdf_icon

AP4438GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 11.5m D Fast Switching Characteristic ID 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of... See More ⇒

Detailed specifications: AP4435GM-HF, AP4435GYT-HF, AP4436GM, AP4437GM-HF, AP4438AGM-HF, AP4438BGM-HF, AP4438CGM-HF, AP4438GM-HF, AO4407, AP4438GYT-HF, AP4439GH-HF, AP4439GM-HF, AP4439GMT-HF, AP4451GH-HF, AP4451GM-HF, AP4451GYT-HF, AP4453GYT-HF