AP4455GMT-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4455GMT-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 39
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 13.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175
Ohm
Package:
PMPAK5X6
AP4455GMT-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4455GMT-HF
Datasheet (PDF)
..1. Size:95K ape
ap4455gmt-hf.pdf
AP4455GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6AG RoHS Compliant & Halogen-FreeS DDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedi
7.1. Size:49K ape
ap4455geh-hf.pdf
AP4455GEH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 21mG Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide
7.2. Size:59K ape
ap4455gyt-hf.pdf
AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de
7.3. Size:112K ape
ap4455gyt.pdf
AP4455GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6AGDSDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggedized device de
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