AP4503BGO-HF Datasheet and Replacement
Type Designator: AP4503BGO-HF
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 6.3(5.2) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 6(6.5) nS
Cossⓘ - Output Capacitance: 105(190) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023(0.035) Ohm
Package: TSSOP8
AP4503BGO-HF Datasheet (PDF)
ap4503bgo-hf.pdf

AP4503BGO-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement G2 N-CH BVDSS 30VS2S2D2 Lower Gate Charge RDS(ON) 23mG1 Fast Switching Performance S1 ID 6.3AS1TSSOP-8 D1 RoHS Compliant & Halogen-Free P-CH BVDSS -30VRDS(ON) 35mDescription ID -5.2AAdvanced Power MOSFETs from APEC
ap4503bgm-hf.pdf

AP4503BGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2 Lower Gate Charge D1 RDS(ON) 18mD1 Fast Switching Performance ID 8.2AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 29mDescription ID -6.6AAdvanced Power MOSFETs from APEC p
ap4503agm-hf.pdf

AP4503AGM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2 Low On-resistance D1 RDS(ON) 28mD1 Fast Switching Performance ID 6.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1S1SO-8RDS(ON) 36mDescription ID -6.3AAdvanced Power MOSFETs from APEC p
ap4503agem.pdf

AP4503AGEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD2D2 Lower Gate Charge RDS(ON) 26mD1D1 Fast Switching Performance ID 7AG2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VS2G1S1SO-8RDS(ON)
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