All MOSFET. AP4506GEH Datasheet

 

AP4506GEH MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP4506GEH
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9(8) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.3 nC
   trⓘ - Rise Time: 18(16) nS
   Cossⓘ - Output Capacitance: 100(220) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024(0.036) Ohm
   Package: TO252-4L

 AP4506GEH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4506GEH Datasheet (PDF)

 ..1. Size:119K  ape
ap4506geh.pdf

AP4506GEH AP4506GEH

AP4506GEHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best

 0.1. Size:116K  ape
ap4506geh-hf.pdf

AP4506GEH AP4506GEH

AP4506GEH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2 RoHS Compliant P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thede

 6.1. Size:197K  ape
ap4506gem.pdf

AP4506GEH AP4506GEH

AP4506GEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 N-CH BVDSS 30V Simple Drive Requirement D2D1 RDS(ON) 30m Low On-resistance D1 ID 6.4A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON

 6.2. Size:117K  ape
ap4506gem-hf.pdf

AP4506GEH AP4506GEH

AP4506GEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2D1 Low On-resistance RDS(ON) 30mD1 Fast Switching Performance ID 6.4AG2S2 RoHS Compliant P-CH BVDSS -30VG1SO-8 S1RDS(ON) 40mDescription ID -6AAdvanced Power MOSFETs from APEC provide thedesi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7807D1PBF

 

 
Back to Top