FRF150R Datasheet and Replacement
Type Designator: FRF150R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 628 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO254AA
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FRF150R Datasheet (PDF)
frf150.pdf

FRF150D, FRF150R,FRF150H25A, 100V, 0.07 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 25A, 100V, RDS(on) = 0.07TO-254AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRE9160D , FRE9160H , FRE9160R , FRE9260D , FRE9260H , FRE9260R , FRF150D , FRF150H , AON7410 , FRF250D , FRF250H , FRF250R , FRF254D , FRF254H , FRF254R , FRF450D , FRF450H .
History: NTMYS1D2N04CL | IRLR024 | AON6794 | MC08N005C | HFP12N65S | CED05N8 | BL10N70-A
Keywords - FRF150R MOSFET datasheet
FRF150R cross reference
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History: NTMYS1D2N04CL | IRLR024 | AON6794 | MC08N005C | HFP12N65S | CED05N8 | BL10N70-A



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