2SK580S Datasheet and Replacement
Type Designator: 2SK580S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: DPAK
2SK580S substitution
2SK580S Datasheet (PDF)
2sk580s.pdf

isc N-Channel MOSFET Transistor 2SK580SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk580l.pdf

isc N-Channel MOSFET Transistor 2SK580LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk583.pdf

Ordering number:EN1793BN-Channel Enhancement Silicon MOSFET2SK583Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters. unit:mm2005CFeatures [2SK583]5.0 Large yfs .4.04.0 Enhancement type. Small ON-resistance.0.450.50.440.451 : Drain2 : Source3 : Gate1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SA
Datasheet: AP4569GD , 2SK56 , 2SK559 , 2SK560 , 2SK578 , 2SK579L , 2SK580L , 2SK579S , AO4407 , 2SK583 , 2SK620 , 2SK655 , 2SK656 , 2SK657 , AP4569GH , AP4569GM , AP4575GH-HF .
History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N
Keywords - 2SK580S MOSFET datasheet
2SK580S cross reference
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History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N



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