2SK580S Specs and Replacement
Type Designator: 2SK580S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: DPAK
2SK580S substitution
- MOSFET ⓘ Cross-Reference Search
2SK580S datasheet
2sk580s.pdf
isc N-Channel MOSFET Transistor 2SK580S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
2sk580l.pdf
isc N-Channel MOSFET Transistor 2SK580L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 6.0 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
2sk583.pdf
Ordering number EN1793B N-Channel Enhancement Silicon MOSFET 2SK583 Analog Switch Applications Applications Package Dimensions Analog switches, low-pass filters. unit mm 2005C Features [2SK583] 5.0 Large yfs . 4.0 4.0 Enhancement type. Small ON-resistance. 0.45 0.5 0.44 0.45 1 Drain 2 Source 3 Gate 1 2 3 JEDEC TO-92 EIAJ SC-43 1.3 1.3 SA... See More ⇒
Detailed specifications: AP4569GD, 2SK56, 2SK559, 2SK560, 2SK578, 2SK579L, 2SK580L, 2SK579S, IRF530, 2SK583, 2SK620, 2SK655, 2SK656, 2SK657, AP4569GH, AP4569GM, AP4575GH-HF
Keywords - 2SK580S MOSFET specs
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History: FCP099N60E | BR2N7002K2 | DMN1002UCA6 | IRF8308M | PTW69N30 | SN6F22NSF | IRF8707
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