2SK583 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK583
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.3 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
   Package: TO92 SC43

2SK583 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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