All MOSFET. AP4800DGM-HF Datasheet

 

AP4800DGM-HF Datasheet and Replacement


   Type Designator: AP4800DGM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8
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AP4800DGM-HF Datasheet (PDF)

 ..1. Size:94K  ape
 ap4800dgm-hf.pdf pdf_icon

AP4800DGM-HF

AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas

 8.1. Size:80K  ape
 ap4800gm.pdf pdf_icon

AP4800DGM-HF

AP4800GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 18m DSimple Drive Requirement ID 9A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

 8.2. Size:95K  ape
 ap4800gyt-hf.pdf pdf_icon

AP4800DGM-HF

AP4800GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device design, low on-resis

 8.3. Size:223K  ape
 ap4800gem.pdf pdf_icon

AP4800DGM-HF

AP4800GEMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 18mD Low On-resistance ID 9.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4800 series are from Advanced Power innovated design andGsilicon process technolog

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History: AP4N2R6H | 60N06G-TQ2-R | STW20NM65N

Keywords - AP4800DGM-HF MOSFET datasheet

 AP4800DGM-HF cross reference
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