All MOSFET. AP4820AGYT-HF Datasheet

 

AP4820AGYT-HF Datasheet and Replacement


   Type Designator: AP4820AGYT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PMPAK3X3
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AP4820AGYT-HF Datasheet (PDF)

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AP4820AGYT-HF

AP4820AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAP4820A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-

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 ap4820agyt.pdf pdf_icon

AP4820AGYT-HF

AP4820AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAP4820A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-

 8.1. Size:59K  ape
 ap4820gyt-hf.pdf pdf_icon

AP4820AGYT-HF

AP4820GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design,

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AP4820AGYT-HF

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Keywords - AP4820AGYT-HF MOSFET datasheet

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