AP4820AGYT-HF Datasheet and Replacement
Type Designator: AP4820AGYT-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.13 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 230 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PMPAK3X3
AP4820AGYT-HF substitution
AP4820AGYT-HF Datasheet (PDF)
ap4820agyt-hf.pdf

AP4820AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAP4820A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
ap4820agyt.pdf

AP4820AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 8.5m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAP4820A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-
ap4820gyt-hf.pdf

AP4820GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGDSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design,
Datasheet: AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AP4800GM , AP4800GYT-HF , AP4810GSM , AP4813GSM-HF , AP4813GYT-HF , IRFZ24N , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , 2SK2654-01 , 2SK2761-01MR .
Keywords - AP4820AGYT-HF MOSFET datasheet
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History: AP4957GM | AP4835GM



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