AP4835GMT-HF Datasheet and Replacement
Type Designator: AP4835GMT-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 195 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: PMPAK5X6
AP4835GMT-HF Datasheet (PDF)
ap4835gmt-hf.pdf

AP4835GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V SO-8 Compatible RDS(ON) 21m Low On-resistance ID -32AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,rugged
ap4835gm.pdf

AP4835GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching ID -9.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-re
ap4835gm-hf.pdf

AP4835GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching ID -9.2AG RoHS Compliant SSSO-8 SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic
Datasheet: AP4800GM , AP4800GYT-HF , AP4810GSM , AP4813GSM-HF , AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , K2611 , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , 2SK2654-01 , 2SK2761-01MR , 2SK2765-01 , 2SK3496-01MR , 2SK3683-01MR .
History: MDD1051RH | STS8201 | 2SK1943-01
Keywords - AP4835GMT-HF MOSFET datasheet
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History: MDD1051RH | STS8201 | 2SK1943-01



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