AP4835GMT-HF MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4835GMT-HF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: PMPAK5X6
AP4835GMT-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4835GMT-HF Datasheet (PDF)
ap4835gmt-hf.pdf
AP4835GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V SO-8 Compatible RDS(ON) 21m Low On-resistance ID -32AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,rugged
ap4835gm.pdf
AP4835GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching ID -9.2AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-re
ap4835gm-hf.pdf
AP4835GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching ID -9.2AG RoHS Compliant SSSO-8 SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic
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