All MOSFET. 2SK2765-01 Datasheet

 

2SK2765-01 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK2765-01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 35 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 1.62 Ohm

Package: TO3P, SC65

2SK2765-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2765-01 Datasheet (PDF)

1.1. 2sk2765-01.pdf Size:77K _fuji

2SK2765-01
2SK2765-01

FUJI POWER MOSFET 2SK2765-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters EIAJ SC-65 Maximum ratings and characteristicAbsolute maximum ratings Equi

1.2. 2sk2765-01.pdf Size:266K _inchange_semiconductor

2SK2765-01
2SK2765-01

isc N-Channel MOSFET Transistor 2SK2765-01 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-

 4.1. 2sk2766-01r.pdf Size:449K _fuji

2SK2765-01
2SK2765-01



4.2. 2sk2764-01r.pdf Size:61K _fuji

2SK2765-01
2SK2765-01

FUJI POWER MOSFET 2SK2764-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series 5.5±0.3 ±0.3 ±0.2 15.5 ø3.2 3.2+0.3 Features High speed switching Low on-resistance No secondary breadown Low driving power ±0.3 2.1±0.3 1.6 Avalanche-proof +0.2 1.1—0.1 ±0.2 3.5 ±0.2 +0.2 ±0.2 5.45 5.45 0.6 Applications Switching regulators 1. Gate 2. Drain UPS

 4.3. 2sk2760-01.pdf Size:291K _fuji

2SK2765-01
2SK2765-01

N-channel MOS-FET 2SK2760-01 FAP-IIS Series 600V 1,2Ω 9A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristi

4.4. 2sk2761-01mr.pdf Size:86K _fuji

2SK2765-01
2SK2765-01

FUJI POWER MOSFET 2SK2761-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters SC-67 EIAJ Maximum ratings and characteristicAbsolute maximum

 4.5. 2sk2767-01.pdf Size:28K _fuji

2SK2765-01

N-channel MOS-FET 2SK2767-01 FAP-IIS Series 900V 5,5Ω 3,5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteris

4.6. 2sk2769-01mr.pdf Size:133K _fuji

2SK2765-01
2SK2765-01

FUJI POWER MOSFET 2SK2769-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters SC-67 EIAJ Maximum ratings and characteristicAbsolute maximum

Datasheet: AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , 2SK2654-01 , 2SK2761-01MR , IRF9540N , 2SK3496-01MR , 2SK3683-01MR , 2SK4075 , 2SK659 , AP4880BGM-HF , AP4880GM , AP4920GM-HF , AP4924GM .

 

 
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