All MOSFET. 2SK2765-01 Datasheet

 

2SK2765-01 Datasheet and Replacement


   Type Designator: 2SK2765-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.62 Ohm
   Package: TO3P SC65
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2SK2765-01 Datasheet (PDF)

 ..1. Size:77K  fuji
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2SK2765-01

FUJI POWER MOSFET2SK2765-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC convertersEIAJ SC-65Maximum ratings and characteristicAbsolute maximum ratingsEqui

 ..2. Size:266K  inchange semiconductor
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2SK2765-01

isc N-Channel MOSFET Transistor 2SK2765-01FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

 8.1. Size:449K  fuji
 2sk2766-01r.pdf pdf_icon

2SK2765-01

 8.2. Size:291K  fuji
 2sk2760-01.pdf pdf_icon

2SK2765-01

N-channel MOS-FET2SK2760-01FAP-IIS Series 600V 1,2 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi

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Keywords - 2SK2765-01 MOSFET datasheet

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